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Micropower Voltage Regulator Schematic Circuit Diagram

This circuit was developed to power an AVR microcontroller from a 12 V lead-acid battery. The regulator itself draws only 14 μA. Of course, there are dedicated ICs, for example from Linear Technology or Maxim, which can be used, but these can be very hard to get hold of and are frequently only available in SMD packages these days. These difficulties are simply and quickly avoided using this discrete circuit.

Micropower Voltage Regulator Schematic Circuit DiagramThe series regulator component is the widely-available type BS170 FET. When power is applied it is driven on via R1. When the output voltage reaches 5.1 V, T2 starts to conduct and limits any further rise in the output voltage by pulling down the voltage on the gate of T1. The output voltage can be calculated as follows:

UOUT = (ULED + UBE) × (R4 + R2) / R4

 where we can set ULED at 1.6 V and UBE at 0.5 V. The temperature coefficients of ULED and UBE can also be incorporated into the formula. The circuit is so simple that of course, someone has thought of it before. The author’s efforts have turned up an example in a collection of reference circuits dating from 1967: the example is very similar to this circuit, although it used germanium transistors and of course, there was no FET. The voltage reference was a Zener diode, and the circuit was designed for currents of up to 10 A. Perhaps Elektor Electronics readers will be able to find even earlier examples of two-transistor regulators using this principle.

BS170, MMBF170. General Description. These N−Channel enhancement mode field effect transistors are produced using semi’s proprietary, high-cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance.
The BS170 is a handy N-channel MOSFET capable of continuously driving up to 500mA. This type of MOSFET is often referred to as a logical level FET since it has a very low gate threshold voltage of around 2.1V.
  • High-Density Cell Design for Low RDS(ON)
  • Voltage Controlled Small Signal Switch
  • Rugged and Reliable
  • High Saturation Current Capability
  • These are Pb−Free Devices

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